·Scientific Research
Current position:
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Scientific Research
Research Field
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Mainly engaged in the studies on microelectronic devices, including:
1) The principle, structure, process and modeling/simulation of advanced small-size CMOS devices;
2) Two-dimensional layered semiconductor materials and nanoelectronic devices;
3) New types of non-volatile semiconductor memories.
Paper Publications
MORE+- [1] Xin-Yuan Zhao.Influence of Si-Substrate Concentration on Electrical Properties of Back- and Top-Gate MoS2 Transistors.IEEE TRANSACTIONS ON ELECTRON DEVICES.2021,68(6):3087-3090
- [2] Xinge Tao.Improved subthreshold swing of MoS2 negative-capacitance transistor by fluorine-plasma treatment on ferroelectric Hf0.5Zr0.5O2 gate dielectric.Nanotechnology.2021,31:135206 (8pp).
- [3] X. Zou.Few-Layered MoS2 Field-Effect Transistors with a Vertical Channel of Sub-10 nm.ACS Appl. Mater. Inter.2020,12(29):32943-32950
- [4] X. Zhao.Improved Interfacial and Electrical Properties of MoS2 Transistor with High/Low-Temperature Grown Hf0.5Al0.5O as Top-Gate Dielectric.IEEE Electron Device Lett..2020,41(3):385-388.
- [5] X. Zhao.Improved Electrical Properties of Top-Gate MoS2 Transistor with NH3-Plasma Treated HfO2 as Gate Dielectric.IEEE Electron Device Lett..2020,41(9):1364-1367
Patents
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Published Books
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Research Projects
MORE+- [1] Steep-Slope Hysteresis-Free MoS2 Negative Capacitance Field-Effect Transistors with High Stability and Low Power Dissipation, National Natural Science Foundation of China (NSFC), 2019-09-07-2023-12-31, in progress
- [2] Dual Gate Few-Layer MoS2 Field-Effect Transistors with High Performance and Low Power Dissipation, National Natural Science Foundation of China (NSFC), 2017-09-07-2021-12-31, In progress
- [3] Small-scalled GeOI-based MOSFET with HfTiO/TaON/GeON stack high-k gate dielectric, National Natural Science Foundation of China (NSFC), 2012-09-07-2016-12-31, Finished
- [4] Small-size InGaAs nMOSFET with ultra-thin HfTiON/GGO stack high-k gate dielectric, National Natural Science Foundation of China (NSFC), 2011-09-07-2015-12-31, Finished
- [5] Charge-Trap Floating-Gate Memory with Small Size, Low Voltage, High Speed and Long Retention, National Natural Science Foundation of China (NSFC), 2009-09-07-2012-12-31, Finished