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第一作者：19. Y. Zhan

通讯作者：C. Wang*

合写作者：G. Yu, J. Xu, J. Li, and

发表刊物：IEEE International Conference on Integrated Circuits, Technologies and Applications (ICTA 2019)

收录刊物：EI

学科门类：工学

一级学科：电子科学与技术

文献类型：C

DOI码：10.1109/ICTA48799.2019.9012812

发表时间：2019-11-13

摘要：This paper proposes a novel Ferroelectric Field-Effect transistor (FeFET) based relaxation oscillator. The novel relaxation oscillator circuit utilizes proposed biasing circuit and unique characteristics of FeFET including negative capacitance (NC), very low subthreshold swing, high transconductance (g m ) and high channel conductance, to achieve ultra-low power and fast start up. Circuit simulation results show that the proposed NC-FeFET based oscillator at 0.6 V in 0.18 µm technology has achieved 88.7% lower power and 81.6% shorter start-up time, than the CMOS-based counterpart.