余国义

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硕士生导师  

在职信息:在职

所在单位:集成电路学院

学历:研究生(博士)毕业

学位:博士学位

毕业院校:华中科技大学

学科:微电子学与固体电子学
电路与系统

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A Novel Fold-Back Current Limiting Protection used in Sub-threshold LDO for Wireless Sensor Applications

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第一作者:Z. Chen

通讯作者:G. Yu*

合写作者:Y. Shi, A. Hu, J. Xu, and Chao Wang

发表刊物:IEEE International Conference on Integrated Circuits, Technologies and Applications (ICTA 2022)

收录刊物:EI

学科门类:工学

一级学科:电子科学与技术

文献类型:C

发表时间:2022-10-03

摘要:This paper presents a novel fold-back current limiting protection circuit used in sub-threshold low dropout regulator (LDO) for wireless sensor applications. By utilizing negative feedback to sense the output current, converting the sampled current to voltage accurately and comparing with a reference voltage, the proposed protection circuit can control the gate voltage of the power transistor to limit the output current and reduce power consumption, thus achieving real-time monitoring of LDO in wireless sensor nodes. The maximum output current and short current of the sub-threshold LDO can be limited to 330 mA and 90 mA, respectively. This can save up to 71.9% of power consumption in the case of an output short-circuit condition compared with traditional constant current limiting protection methods. In a 0.35-μm CMOS technology, the sub-threshold LDO can provide a 3.3 V output voltage stably under the 5 V input voltage when the load current changes from 1 μA to 200 mA, and the load regulation rate is only 0.019 mV/mA.