CN

程伟明CHENG WEI MING

Associate professor Supervisor of Doctorate Candidates Supervisor of Master's Candidates

Professional Title:Associate professor
Gender:Male
Status:Employed
Department:IC College
Education Level:Postgraduate (Doctoral)
Degree:Doctoral Degree

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Paper Publications

Current position: 英文主页 > Scientific Research > Paper Publications

Rui Su,Dunbao Chen,Ruizi Xiao,Yuheng Deng,Yufeng Duan,Yi Li,Lei Ye,Jingping Xu,Peter To Lai,Xiangshui Miao.Weiming Cheng,Hongyu An.Oxygen Vacancy Compensation-Induced Analog Resistive Switching in the SrFeO3−δ/Nb:SrTiO3 Epitaxial Heterojunction for NoiseTolerant High-Precision Image Recognition.[J].ACS Applied Materials & Interfaces,2024,(40):54115-54128
Rui Su,Yuheng Deng,Weichao Jiang,Yufeng Duan,Runqing Zhang,Ruizi Xiao,Chenglin Shen,Mingxing Gong,Xiangshui Miao.Weiming Cheng,Jingping Xu,Peter To Lai.Validation of van der Waals Interface for Enhanced Resistive Switching Performance in Memristor by Using Topotactic Phase Transition Material.[J].ACS Applied Electronic Materials,2024,(9):6338-6343
Runqing Zhang,Rui Su,Ruizi Xiao,Zhengze Yuan,Hao Tong,Xiangshui Miao.Weiming Cheng.Improved cycling stability and ON-OFF ratio of SrFeOx topological phase transition memristors using a La0.7Sr0.3MnO3 bottom electrode.Journal of Materials Chemistry C,2024,(16):5810-5817
Rui Su,Ruizi Xiao,Chenglin Shen,Yinyuan Chen,Weichao Jiang,Zichong Zhang,Runqing Zhang,Awei Dong,Xingsheng Wang,Xiangshui Miao.Weiming Cheng.Improved oxygen ion migration efficiency and resistive switching properties in SrFeOx memristor with vertical superlattice-like structure.[J].Ceramics International,2024,(1):2000-2008
Runqing Zhang,Rui Su,Chenglin Shen,Ruizi Xiao,Xiangshui Miao.Weiming Cheng.Research Progress on the Application of Topological Phase Transition Materials in the Field of Memristor and Neuromorphic Computing.[J].Sensors,2023,(21):8838(1-29)
Rui Su,Danzhe Song,Runqing Zhang,Chenglin Shen,Min Cheng,Yi Li,Xingsheng Wang,Xiangshui Miao.Weiming Cheng.Enhanced Resistive Switching Performances of Mn-Doped BiFeO3 Memristor by Introducing Oxygen Reservoir Interface.IEEE Transactions on Electron Devices,2023,(11):5626-5631
Rui Su,Yuwei Zhao,Ruizi Xiao,Awei Dong,Zhengze Yuan,Rui Yang,Junbing Yan,Yongchao Wang,Mingxing Gong,Xiangshui Miao.Weiming Cheng.Orthorhombic phase induced ultra-low operation voltage in La-doped BiFeO3 resistive switching devices.Ceramics International,2023,(17):28080-28088
Chiming Fang,Houji Zhou,Ling Yang,Xiangshui Miao.Weiming Cheng,Yi Li.High-Efffcient Memristive Genetic Algorithm for Feature Selection.IEEE Transactions on Electron Devices,2023,(8):4163-4169
Rui Su,Ruizi Xiao,Chenglin Shen,Danzhe Song,Jiabao Chen,Bangda Zhou,Yi Li,Xingsheng Wang,Xiangshui Miao.Weiming Cheng.Oxygen ion migration induced polarity switchable SrFeOx memristor for high-precision handwriting recognition.Applied Surface Science,2023,156620 (1-10)
Yuwei Zhao,Rui Su,Lele Cheng,Min Cheng,Hao Tong,Huajun Sun,Junbing Yan,Xiangshui Miao.Weiming Cheng.Ultra-low power consumption and favorable reliability Mn-doped BiFeO3 resistance-switching devices via tunable oxygen vacancy.Ceramics International,2023,(6):9090-9096

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