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程伟明
CHENG WEI MING
Associate professor Supervisor of Doctorate Candidates Supervisor of Master's Candidates
Professional Title:Associate professor
Gender:Male
Status:Employed
Department:IC College
Education Level:Postgraduate (Doctoral)
Degree:Doctoral Degree
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Scientific Research
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Scientific Research
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Paper Publications
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Rui Su,Dunbao Chen,Ruizi Xiao,Yuheng Deng,Yufeng Duan,Yi Li,Lei Ye,Jingping Xu,Peter To Lai,Xiangshui Miao.Weiming Cheng,Hongyu An.Oxygen Vacancy Compensation-Induced Analog Resistive Switching in the SrFeO3−δ/Nb:SrTiO3 Epitaxial Heterojunction for NoiseTolerant High-Precision Image Recognition.[J].ACS Applied Materials & Interfaces,2024,(40):54115-54128
Rui Su,Yuheng Deng,Weichao Jiang,Yufeng Duan,Runqing Zhang,Ruizi Xiao,Chenglin Shen,Mingxing Gong,Xiangshui Miao.Weiming Cheng,Jingping Xu,Peter To Lai.Validation of van der Waals Interface for Enhanced Resistive Switching Performance in Memristor by Using Topotactic Phase Transition Material.[J].ACS Applied Electronic Materials,2024,(9):6338-6343
Runqing Zhang,Rui Su,Ruizi Xiao,Zhengze Yuan,Hao Tong,Xiangshui Miao.Weiming Cheng.Improved cycling stability and ON-OFF ratio of SrFeOx topological phase transition memristors using a La0.7Sr0.3MnO3 bottom electrode.Journal of Materials Chemistry C,2024,(16):5810-5817
Rui Su,Ruizi Xiao,Chenglin Shen,Yinyuan Chen,Weichao Jiang,Zichong Zhang,Runqing Zhang,Awei Dong,Xingsheng Wang,Xiangshui Miao.Weiming Cheng.Improved oxygen ion migration efficiency and resistive switching properties in SrFeOx memristor with vertical superlattice-like structure.[J].Ceramics International,2024,(1):2000-2008
Runqing Zhang,Rui Su,Chenglin Shen,Ruizi Xiao,Xiangshui Miao.Weiming Cheng.Research Progress on the Application of Topological Phase Transition Materials in the Field of Memristor and Neuromorphic Computing.[J].Sensors,2023,(21):8838(1-29)
Rui Su,Danzhe Song,Runqing Zhang,Chenglin Shen,Min Cheng,Yi Li,Xingsheng Wang,Xiangshui Miao.Weiming Cheng.Enhanced Resistive Switching Performances of Mn-Doped BiFeO3 Memristor by Introducing Oxygen Reservoir Interface.IEEE Transactions on Electron Devices,2023,(11):5626-5631
Patents
程伟明,苏睿.肖睿子,陈家宝,缪向水.一种自成型的拓扑相变纳米存储器件结构、其制备和应用.Invent,CN 114883487 B,2022-04-29
程伟明,张润青,苏睿,缪向水.一种低电阻的镧锶锰氧电极薄膜及其制备方法.Invent,CN 117568755 B,2024-01-15
程伟明,苏睿,张润青,缪向水.一种导电丝形成区域可控的拓扑相变忆阻器及其制备方法.Invent,CN 117529222 B,2023-12-29
程伟明,苏睿.张润青,肖睿子,缪向水.一种拓扑相变忆阻器及其制备方法和应用.Invent,CN 116867352 B,2023-09-04
程伟明,苏睿.肖睿子,缪向水.具有多值特性的SrFeOx阻变存储器、其制备和应用.Invent,CN 114361336 B,2021-12-29
Published Books
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Research Projects
高垂直磁各向异性与大自旋极化率 MnGa薄膜的制备及其形成机理研究,C09DA8D8C03E4005953D0A3F2654B093,2016YXMS204,2016-04-26-2018-04-30
光致磁变超高密度快速硬盘新原理与新技术研究,51B5039AC21248249DEE88CDF092A672,61432007,2014-08-15-2019-12-31
SmCo5 纳米点阵列的制备及磁性研究,51B5039AC21248249DEE88CDF092A672,51001051,2010-08-18-2013-12-31
忆阻存算一体化架构设计与芯片研制,1B3F40C122C849E38BF01E61B5528442,2019YFB2205103,2020-01-01-2023-12-31
具备多时间尺度神经动力学的忆阻器件研究,1B3F40C122C849E38BF01E61B5528442,2021ZD0201203,2021-12-01-2026-11-30