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Rong Chen

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一种基于等离子体增强原子层沉积的薄膜掺杂改性方法

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Affilication of Author(s):华中科技大学

School Sign:华中科技大学

Disigner of the Invention:何文杰,段晨龙,褚波,单斌,文艳伟

Type of Patent:Invent

Authorization number:ZL201310636874.1

Number of Inventors:6

Authorization Date:2015-09-23

First Author:陈蓉

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