华中科技大学主页平台管理系统 Huajun SUN--英文主页--Paper Publications

Huajun SUN

Recommended Ph.D.Supervisor Recommended MA Supervisor

·Paper Publications

Current position: 英文主页 > Scientific Research > Paper Publications

[11] Na Bai,Baoyi Tian,GeQi Mao,KanHao Xue*,Tao Wang,JunHui Yuan,Xiaoxin Liu,Zhaonan Li,Shen Guo,Zuopai Zhou,Nian Liu,Hong Lu,Xiaodong Tang, Huajun Sun*,and Xiangshui Miao,Homo-layer hafnia-based memristor with large analog switching window,Appl.Phys.Lett.118,043502 (2021)..
[12] Jianwei Guo,Shen Guo,Xiaoming Su,Sheng Zhu,Yue Pang,Wei Luo,Jianbing Zhang,Huajun Sun,Honglang Li,Daoli Zhang,Nonvolatile Resistive Switching Memory Device Employing CdSe/CdS Core/Shell Quantum Dots as an Electrode Modification Layer,ACS Applied Electronic Materials,2020..
[13] Coexistence of digital and analog resistive switching with low operation voltage in oxygen-gradient HfOx memristors, Zhaonan Li, Baoyi Tian, Kan-Hao Xue, Biao Wang, Ming Xu, Hong Lu, Huajun Sun*, and Xiangshui Miao, IEEE Electron Device Letters 40, 1068 (2019).
[14] Oxygen migration around the filament region in HfOx memristors, Ge-Qi Mao, Kan-Hao Xue*, Ya-Qian Song, Wei Wu, Jun-Hui Yuan, Li-Heng Li, Huajun Sun, Shibing Long, and Xiang-Shui Miao, AIP Advances 9, 105007 (2019).
[15] Self-compliance characteristics and switching degradation in TaOx-based memristors, Mingrui Jiang, Biao Wang, Kan-Hao Xue, Nian Liu, Huajun Sun*, Hong Lu, and Xiangshui Miao, Applied Physics Express 12, 104003 (2019).
[16] Alleviating Conductance Nonlinearity via Pulse Shape Designs in TaOₓ Memristive Synapses, Shi-Jie Li , Bo-Yi Dong, Biao Wang, Yi Li , Hua-Jun Sun, Yu-Hui He, Nuo Xu , and Xiang-Shui Miao, IEEE Transactions on Electron Devices, 66, 810 (2019)..
[17] Model of dielectric breakdown in hafnia-based ferroelectric capacitors, Kan-Hao Xue, Hai-Lei Su, Yi Li, Hua-Jun Sun, Wei-Fan He, Ting-Chang Chang*, Lin Chen*, David Wei Zhang and Xiang-Shui Miao*, Journal of Applied Physics, 124, 024103 (2018).
[18] Boolean and sequential logic in a one-memristor-one-resistor (1M1R) structure for in-memory computing, Ya-Xiong Zhou, Yi Li*, Nian Duan, Zhuo-Rui Wang, Ke Lu, Miao-Miao Jin, Long Chen, Si-Yu Hu, Ting-Chang Chang, Hua-Jun Sun, Kan-Hao Xue and Xiang-Shui Miao*, Advanced Electronic Materials, 1800229 (2018).
[19] Diverse spike-timing dependent plasticity based on multilevel HfOx memristor for neuromorphic computing, Ke Lu, Yi Li*, Wei-fan He, Jia Chen, Ya-Xiong Zhou, Nian Duan, Miao-Miao Jin, Wei Gu, Kan-Hao Xue, Hua-Jun Sun, and Xiang-Shui Miao, Applied Physics A. Materials Science & Processing, 124:438 (2018).
[20] Performance enhancement of TaOx resistive switching memory using graded oxygen content，B. Wang, K. H. Xue, H. J. Sun*, Z. N. Li, W. Wu, P. Yan, N. Liu, B. Y. Tian, X. X. Liu, and X. S. Miao，Appl. Phys. Lett. 113, 183501 (2018).

total47 2/5

first previous next last Page