个人信息
Personal information
教授 博士生导师 硕士生导师
性别:男
在职信息:在职
所在单位:集成电路学院
学历:研究生(博士)毕业
学位:博士学位
毕业院校:中国科学院上海光机所
学科:微电子学与固体电子学曾获荣誉:
2022 Wiley中国开放科学高贡献作者
2019 2019年北京市技术发明一等奖
2018 2018校级创新创业优秀指导老师
2017 Lam Research微电子论文奖1次
2017 指导的研究生获得国家奖学金3人次
2020 2017,2018,2020年获得校级优秀教师班主任3次
论文类型:期刊论文
第一作者:汪美青
通讯作者:王兴晟
合写作者:黄梦华,王成旭,孙华军,缪向水
发表刊物:IEEE Transactions on Electron Devices
收录刊物:SCI、EI
文献类型:J
卷号:70
期号:9
页面范围:4628-4634
ISSN号:print 0018-9383; online 1557-9646
关键字:memristor, multi-level conductance, lookup table, programming, reset pulse, variation
DOI码:10.1109/TED.2023.3294352
发表时间:2023-07-07
摘要:In this paper, we adopted an approach using consistently stepped identical reset-pulses to program the multi-level conductance in HfOx/AlOy superlattice-like memristors. Through the experimental measurements by applying a series of identical reset pulses, the conductance of memristors is confirmed to converge to a stable and uniform value, with the achieved conductance state depending on the applied pulse amplitude. Later, the adopted programming approach is comprehensively discussed in terms of pulse selection, programming scenarios. Based on the fact the converged conductance is strongly associated with the applied pulse amplitude, the 8-level lookup-table programming method is established and applied, and it outperforms the write-verify method in terms of programming complexity, programming variations and retention performance. The underlying programming mechanism and the memristor evolution process are also discussed.
发布期刊链接:https://ieeexplore.ieee.org/document/10190203
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Ultra-Low Power Consumption and Favorable Reliability Mn-Doped Bifeo3 Resistance-Switching Devices Via Tunable Oxygen Vacancy
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Na Bai,Baoyi Tian,GeQi Mao,KanHao Xue*,Tao Wang,JunHui Yuan,Xiaoxin Liu,Zhaonan Li,Shen Guo,Zuopai Zhou,Nian Liu,Hong Lu,Xiaodong Tang, Huajun Sun*,and Xiangshui Miao,Homo-layer hafnia-based memristor with large analog switching window,Appl.Phys.Lett.118,043502 (2021).