科学研究
先进存储器、神经形态器件及类脑芯片技术、忆阻器及阻变式存储器
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[1] Na Bai,Lanqing Zou,Jun-Hui Yuan,Tao Wang,Li Li, Huajun Sun*, Weiming Cheng, Xiaodong Tang, Hong Lu, Xiangshui Miao.Needle-like quantum dots effectively guide conductive filaments in hafnium-based memory devices.Materials Letters,2024,136228
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[2] Ge-Qi Mao, Kan-Hao Xue*, Ya-Qian Song, Wei Wu, Jun-Hui Yuan, Li-Heng Li, Huajun Sun, Shibing Long, and Xiang-Shui Miao.Oxygen migration around the filament region in HfOx memristors.AIP Advance,2019,105007
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[3] Li LH, Xue KH, Zou LQ, Yuan JH, Sun HJ, Miao XS.Multilevel switching in Mg-doped HfOx memristor through the mutual-ion effect.Applied Physics Letters,2021,(15):153505
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[4] , Zhang Y, Mao GQ, Zhao XL, Li Y, Zhang MY, Wu ZH, Wu W, Sun HJ, Guo YZ, Wang LH, Zhang XM, Liu Q, Lv HB, Xue KH, Xu GW, Miao XS, Long SB, Liu M.Evolution of the conductive filament system in HfO2-based memristors observed by direct atomic-scale imaging.Nature Communications,2021,7232
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[5] Li Li, Zuopai Zhou, Na Bai, Tao Wang, Kan-Hao Xue, Huajun Sun*, Qiang He, Weiming Cheng, Xiangshui Miao.Naive Bayes classifier based on memristor nonlinear conductance.Microelectronics Journal,2022,105574
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[1] 高逼真模拟神经递质动力学过程的神经形态器件研究,AB075E9C5E384819B3B712FA1087D582,2024-08-24-
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[2] 科技创新2030—重大项目子课题:感存算一体化的多维融合光电智能感知芯片,150万,SQ2021AAA010105,2022年1月至2025年12月,主持,
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[3] 国家重点研发计划课题:RRAM三维堆叠集成技术研究,1494万元,2023YFB4402402,2023.11-2027.12,主持,
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[4] 梯度 型阻变功能层忆阻器的制备及其神经形态计算应用研究,国家自然科学基金面上项目,59万,2020.01-2024.12,主持,
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[5] HfOx忆阻器的量子化电导调控研究,国家自然科学基金面上项目,67万,2017.01-2020.12,主持,