个人信息
Personal information
教授 博士生导师 硕士生导师
性别：男
在职信息：在职
所在单位：集成电路学院
学历：研究生(博士)毕业
学位：工学博士学位
毕业院校：中国科学院上海光机所
学科：微电子学与固体电子学曾获荣誉：
2022 Wiley中国开放科学高贡献作者
2019 2019年北京市技术发明一等奖
2018 2018校级创新创业优秀指导老师
2017 Lam Research微电子论文奖1次
2017 指导的研究生获得国家奖学金3人次
2020 2017,2018,2020年获得校级优秀教师班主任3次
- [1] Na Bai,Lanqing Zou,Jun-Hui Yuan,Tao Wang,Li Li, Huajun Sun*, Weiming Cheng, Xiaodong Tang, Hong Lu, Xiangshui Miao.Needle-like quantum dots effectively guide conductive filaments in hafnium-based memory devices.Materials Letters,2024,136228
- [2] Ge-Qi Mao, Kan-Hao Xue*, Ya-Qian Song, Wei Wu, Jun-Hui Yuan, Li-Heng Li, Huajun Sun, Shibing Long, and Xiang-Shui Miao.Oxygen migration around the filament region in HfOx memristors.AIP Advance,2019,105007
- [3] Li LH, Xue KH, Zou LQ, Yuan JH, Sun HJ, Miao XS.Multilevel switching in Mg-doped HfOx memristor through the mutual-ion effect.Applied Physics Letters,2021,(15):153505
- [4] , Zhang Y, Mao GQ, Zhao XL, Li Y, Zhang MY, Wu ZH, Wu W, Sun HJ, Guo YZ, Wang LH, Zhang XM, Liu Q, Lv HB, Xue KH, Xu GW, Miao XS, Long SB, Liu M.Evolution of the conductive filament system in HfO2-based memristors observed by direct atomic-scale imaging.Nature Communications,2021,7232
- [5] Li Li, Zuopai Zhou, Na Bai, Tao Wang, Kan-Hao Xue, Huajun Sun*, Qiang He, Weiming Cheng, Xiangshui Miao.Naive Bayes classifier based on memristor nonlinear conductance.Microelectronics Journal,2022,105574
- [6] Na Bai, Kan-Hao Xue*, Jinhai Huang, Jun-Hui Yuan, Wenlin Wang, Ge-Qi Mao, Lanqing Zou, Shengxin Yang, Hong Lu, Huajun Sun*, Xiangshui Miao.Designing Wake-Up Free Ferroelectric Capacitors Based on the HfO2/ZrO2 Superlattice Structure.Adv. Electron. Mater.,2022,1-9
- [7] Hua-Nan Liang, Na Bai, Lan-Qing Zou, Hua-Jun Sun*, Kan-Hao Xue, Wei-Ming Cheng, Hong Lu, Xiangshui Miao.Resistive Switching Characteristics of HfOx-Based Memristor by Inserting GeTe Layer.IEEE Transactions on Electron Devices,2022,1-5
- [8] Zhong,Yingpeng,李祎,缪向水,程晓敏,童浩,孙华军,Wang,Qing,Xu,Lei,Zhang,Jinjian.缪向水.Activity-Dependent Synaptic Plasticity of a Chalcogenide Electronic Synapse for Neuromorphic Systems.[J].SCIENTIFIC REPORTS,4173,
- [9] 赵雨薇,鄢俊兵,孙华军,童浩,程伟明,程敏,程乐乐,苏睿.缪向水.Ultra-Low Power Consumption and Favorable Reliability Mn-Doped Bifeo3 Resistance-Switching Devices Via Tunable Oxygen Vacancy.[J].Ceramics International,4476,(6):9090-9096
- [10] Na Bai,Baoyi Tian,GeQi Mao,KanHao Xue*,Tao Wang,JunHui Yuan,Xiaoxin Liu,Zhaonan Li,Shen Guo,Zuopai Zhou,Nian Liu,Hong Lu,Xiaodong Tang, Huajun Sun*,and Xiangshui Miao,Homo-layer hafnia-based memristor with large analog switching window,Appl.Phys.Lett.118,043502 (2021)..