论文类型：期刊论文
第一作者：Zhong,Yingpeng,李祎
通讯作者：缪向水
合写作者：缪向水,程晓敏,童浩,孙华军,Wang,Qing,Xu,Lei,Zhang,Jinjian
发表刊物：SCIENTIFIC REPORTS
所属单位：华中科技大学
学科门类：工学
一级学科：电子科学与技术
文献类型：J
DOI码：10.1038/srep04906
发表时间：4173-12-01
摘要：Nanoscale inorganic electronic synapses or synaptic devices, which are capable ofemulating the functions of biological synapses of brain neuronal systems, are regarded as the basic building blocks for beyond-Von Neumann computing architecture, combining information storage and processing. Here, we demonstrate a Ag/AgInSbTe/Ag structure for chalcogenide memristor-based electronic synapses. The memristive characteristics with reproducible gradual resistance tuning are utilised to mimic the activity-dependent synaptic plasticity that serves as the basis of memory and learning. Bidirectional long-term Hebbian plasticity modulation is implemented by the coactivity of pre- and postsynaptic spikes, and the sign and degree are affected by assorted factors including the temporal difference, spike rate and voltage. Moreover, synaptic saturation is observed to be an adjustment of Hebbian rules to stabilise the growth of synaptic weights. Our results may contribute to the development ofhighly functional plastic electronic synapses and the further construction of next-generation parallel neuromorphic computing architecture.
发布期刊链接：https://www.nature.com/articles/srep04906