·Paper Publications
- [31] 王宽,缪向水,TONG HAO,Scheicher,H.,Ralph,WANG LUN,张大友,Zhuge Fuwei,林琪,高滨,胡庆.He Yuhui.Threshold switching memristor-based stochastic neurons for probabilistic computing.[J].The Royal Society of Chemistry,4417,(2):619-629
- [32] 林俊,麦贤良,徐明,侯祥,TONG HAO,He Yuhui,李祎,张伟.缪向水,周鹏,徐明.Recent Advances on Neuromorphic Devices Based on Chalcogenide Phase-Change Materials.[J].Advanced Functional Materials,4411,(50):2003419
- [33] 马平,程晓敏,徐明,TONG HAO.缪向水.Suppressed resistance drift from short range order of amorphous GeTe ultrathin films.[J].Applied Physics Letters,4402,(2):022109
- [34] yuanjunhui,黄晓弟,李灏阳,Xue Kanhao,He Yuhui,TONG HAO,李祎,万天晴,卢一帆.缪向水.Controlled Memory and Threshold Switching Behaviors in a Heterogeneous Memristor for Neuromorphic Computing.[J].Advanced Electronic Materials,4402,(8):2000309
- [35] 冯金龙,TONG HAO,Lin,Xui,Meng,王校杰,Bryja,Hagen,Lotnyk,Andriy.缪向水,徐明,程晓敏.“Stickier”-Surface Sb2Te3 Templates Enable Fast Memory Switching of Phase Change Material GeSb2Te4 with Growth-Dominated Crystallization.[J].ACS applied materials & interfaces,4401,(29):33397−33407
- [36] HE CHAO,陈超,yangzhe.缪向水,TONG HAO.Novel Fe-based metallic glass for improvedresolution, maskless phase-changephotolithography.[J].Applied optics,4397,(18):5547-5552
- [37] Eshraghian,K.,Jason,Iu,C.,H.,Herbert,Wang;,Xiaoyuan,胡庆,林琪.TONG HAO.A Behavioral Model of Digital Resistive Switching for Systems Level DNN Acceleration.[J].IEEE Transactions on Circuits and Systems II: Express Briefs,4395,(5):956 - 960
- [38] 胡庆,He Yuhui,黄恩铭,WANG LUN,dongboyi.缪向水,徐明,TONG HAO.An artificial synapse by superlattice-like phase-change material for low-power brain-inspired computing.[J].Chinese Physics B,4388,(7):070701
- [39] 徐萌,Ho,Kai-Ming,Cai-Zhuang,Wang,Songyou,程晓敏,TONG HAO,Xue Kanhao,qiaochong,徐萌.缪向水,徐明.Polyamorphism in K2Sb8Se13 for multi-level phase-change memory.[J].Journal of Materials Chemistry C,4378,(1):
- [40] 周凌珺,程晓敏,徐明,钱航,王校杰,yangzhe,周凌珺.缪向水,TONG HAO.Resistance Drift Suppression Utilizing GeTe/Sb 2 Te 3 Superlattice‐Like Phase‐Change Materials.[J].Advanced Electronic Materials,4378,(1):