Indexed by: Essay collection

First Author: Zichong Zhang

Correspondence Author: Xingsheng Wang

Co-author: Yifan Yang,Rui Su,Tonghui Lin,Xiangshui Miao

Journal: 8th IEEE Electron Devices Technology and Manufacturing (EDTM) Conference

Included Journals: EI

Page Number: 1-3

DOI number: 10.1109/EDTM58488.2024.10511655

Date of Publication: 2024-03-06

Abstract: Hf0.5Zr0.5O2 (HZO) capacitors are well prepared with excellent ferroelectricity, and recorded polarization switching (PSw)=30.5μC/cm2 is achieved by the proposed “thermal rewake-up” (TR) operations and a large single orthorhombic phase (O-phase) grain in 40-nm long region has been demonstrated correspondingly. Oxygen diffusion region can be observed in HZO capacitors with TR operation. Meanwhile, the TR operation of ferroelectric enhancement shows no degradation of endurance of HZO capacitors, indicating the possibility to be widely used.

Links to published journals: https://ieeexplore.ieee.org/abstract/document/10511655