徐静平

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Optimizing Al-doped ZrO2 as gate dielectric of MoS2 field-effect transistors
Release time:2021-05-21  Hits:

Indexed by: Journal paper

Document Code: 6

First Author: Xingjuan Song

Correspondence Author: Jingping Xu*,Wing-Man Tang

Co-author: Lu Liu,Pui-To Lai

Journal: Nanotechnology

Included Journals: SCI

Affiliation of Author(s): 华中科技大学

Place of Publication: 英国

Discipline: Engineering

First-Level Discipline: Electronic Science And Technology

Funded by: 国家自然科学基金

Document Type: J

Volume: 31

Page Number: 135206 (8pp).

Date of Publication: 2020-05-08

Teaching and Research Group: 光学与电子信息学院