·Paper Publications
Optimizing Al-doped ZrO2 as gate dielectric of MoS2 field-effect transistors
Release time:2021-05-21  Hits:
Indexed by: Journal paper
Document Code: 6
First Author: Xingjuan Song
Correspondence Author: Jingping Xu*,Wing-Man Tang
Co-author: Lu Liu,Pui-To Lai
Journal: Nanotechnology
Included Journals: SCI
Affiliation of Author(s): 华中科技大学
Place of Publication: 英国
Discipline: Engineering
First-Level Discipline: Electronic Science And Technology
Funded by: 国家自然科学基金
Document Type: J
Volume: 31
Page Number: 135206 (8pp).
Date of Publication: 2020-05-08
Teaching and Research Group: 光学与电子信息学院