徐静平

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Improved Electrical Properties of Top-Gate MoS2 Transistor with NH3-Plasma Treated HfO2 as Gate Dielectric
Release time:2021-05-21  Hits:

Indexed by: Journal paper

Document Code: 5

First Author: X. Zhao

Correspondence Author: L. Liu

Co-author: J. P. Xu#,Z. Li

Journal: IEEE Electron Device Lett.

Included Journals: SCI

Affiliation of Author(s): 华中科技大学

Place of Publication: 美国

Discipline: Engineering

First-Level Discipline: Electronic Science And Technology

Funded by: 国家自然科学基金

Document Type: J

Volume: 41

Issue: 9

Page Number: 1364-1367

Date of Publication: 2020-09-05

Teaching and Research Group: 光学与电子信息学院