·Paper Publications
Improved Electrical Properties of Top-Gate MoS2 Transistor with NH3-Plasma Treated HfO2 as Gate Dielectric
Release time:2021-05-21  Hits:
Indexed by: Journal paper
Document Code: 5
First Author: X. Zhao
Correspondence Author: L. Liu
Co-author: J. P. Xu#,Z. Li
Journal: IEEE Electron Device Lett.
Included Journals: SCI
Affiliation of Author(s): 华中科技大学
Place of Publication: 美国
Discipline: Engineering
First-Level Discipline: Electronic Science And Technology
Funded by: 国家自然科学基金
Document Type: J
Volume: 41
Issue: 9
Page Number: 1364-1367
Date of Publication: 2020-09-05
Teaching and Research Group: 光学与电子信息学院