徐静平

·Paper Publications

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Improved interfacial and electrical properties of few-layered MoS2 FETs with plasma-treated Al2O3 as gate dielectric
Release time:2021-05-21  Hits:

Indexed by: Journal paper

Document Code: 12

First Author: Xingjuan Song

Correspondence Author: Wing-Man Tang,Jingping Xu*

Co-author: Pui-To Lai,Lu Liu

Journal: Applied Surface Science

Included Journals: SCI

Affiliation of Author(s): 华中科技大学

Place of Publication: 英国

Discipline: Engineering

First-Level Discipline: Electronic Science And Technology

Funded by: 国家自然科学基金

Document Type: J

Volume: 481

Page Number: 1028-1034.

Date of Publication: 2019-04-08

Teaching and Research Group: 光学与电子信息学院