·Paper Publications
Improved interfacial and electrical properties of few-layered MoS2 FETs with plasma-treated Al2O3 as gate dielectric
Release time:2021-05-21  Hits:
Indexed by: Journal paper
Document Code: 12
First Author: Xingjuan Song
Correspondence Author: Wing-Man Tang,Jingping Xu*
Co-author: Pui-To Lai,Lu Liu
Journal: Applied Surface Science
Included Journals: SCI
Affiliation of Author(s): 华中科技大学
Place of Publication: 英国
Discipline: Engineering
First-Level Discipline: Electronic Science And Technology
Funded by: 国家自然科学基金
Document Type: J
Volume: 481
Page Number: 1028-1034.
Date of Publication: 2019-04-08
Teaching and Research Group: 光学与电子信息学院