·Paper Publications
Effects of trapped charges in gate dielectric and high-k encapsulation on performance of MoS2 transistor
Release time:2021-05-21  Hits:
Indexed by: Journal paper
Document Code: 13
First Author: Jingping Xu
Correspondence Author: Lu Liu,Wing-Man Tang
Co-author: Wenxuan Xie,Xinyuan Zhao,Xingjuan Song,Pui-To Lai
Journal: IEEE Transactions on Electron Devices
Included Journals: SCI
Affiliation of Author(s): 华中科技大学
Place of Publication: 美国
Discipline: Engineering
First-Level Discipline: Electronic Science And Technology
Funded by: 国家自然科学基金
Document Type: J
Volume: 66
Issue: 2
Page Number: 1107-1112.
Date of Publication: 2019-02-05
Teaching and Research Group: 光学与电子信息学院