徐静平

·Paper Publications

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Effects of trapped charges in gate dielectric and high-k encapsulation on performance of MoS2 transistor
Release time:2021-05-21  Hits:

Indexed by: Journal paper

Document Code: 13

First Author: Jingping Xu

Correspondence Author: Lu Liu,Wing-Man Tang

Co-author: Wenxuan Xie,Xinyuan Zhao,Xingjuan Song,Pui-To Lai

Journal: IEEE Transactions on Electron Devices

Included Journals: SCI

Affiliation of Author(s): 华中科技大学

Place of Publication: 美国

Discipline: Engineering

First-Level Discipline: Electronic Science And Technology

Funded by: 国家自然科学基金

Document Type: J

Volume: 66

Issue: 2

Page Number: 1107-1112.

Date of Publication: 2019-02-05

Teaching and Research Group: 光学与电子信息学院