·Paper Publications
Influence of Si-Substrate Concentration on Electrical Properties of Back- and Top-Gate MoS2 Transistors
Release time:2021-05-24  Hits:
Indexed by: Journal paper
Document Code: 1
First Author: Xin-Yuan Zhao
Correspondence Author: Jing-Ping Xu*
Co-author: Lu Liu
Journal: IEEE TRANSACTIONS ON ELECTRON DEVICES
Included Journals: SCI
Affiliation of Author(s): 华中科技大学
Place of Publication: 美国
Discipline: Engineering
First-Level Discipline: Electronic Science And Technology
Funded by: 国家自然科学基金
Document Type: J
Volume: 68
Issue: 6
Page Number: 3087-3090
ISSN No.: 0018-9383
Date of Publication: 2021-05-23
Teaching and Research Group: 光学与电子信息学院