徐静平

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Influence of Si-Substrate Concentration on Electrical Properties of Back- and Top-Gate MoS2 Transistors
Release time:2021-05-24  Hits:

Indexed by: Journal paper

Document Code: 1

First Author: Xin-Yuan Zhao

Correspondence Author: Jing-Ping Xu*

Co-author: Lu Liu

Journal: IEEE TRANSACTIONS ON ELECTRON DEVICES

Included Journals: SCI

Affiliation of Author(s): 华中科技大学

Place of Publication: 美国

Discipline: Engineering

First-Level Discipline: Electronic Science And Technology

Funded by: 国家自然科学基金

Document Type: J

Volume: 68

Issue: 6

Page Number: 3087-3090

ISSN No.: 0018-9383

Date of Publication: 2021-05-23

Teaching and Research Group: 光学与电子信息学院