·Paper Publications
Improved subthreshold swing of MoS2 negative-capacitance transistor by fluorine-plasma treatment on ferroelectric Hf0.5Zr0.5O2 gate dielectric
Release time:2021-05-21 Hits:
Indexed by: Journal paper
Document Code: 2
First Author: Xinge Tao
Correspondence Author: Lu Liu*,Pui-To Lai*
Co-author: Jingping Xu#
Journal: Nanotechnology
Included Journals: SCI
Affiliation of Author(s): 华中科技大学
Place of Publication: 英国
Discipline: Engineering
First-Level Discipline: Electronic Science And Technology
Funded by: 国家自然科学基金
Document Type: J
Volume: 31
Page Number: 135206 (8pp).
Date of Publication: 2021-03-05
Teaching and Research Group: 光学与电子信息学院