·Paper Publications
Wenfeng Zhang#, *, Tomonori Nishimura, and Akira Toriumi, Impact of GeO2 passivation layer quality on band alignment at GeO2/Ge interface studied by internal photoemission spectroscopy, Appl. Phys. Express, 2016, 9: 024201
Release time:2021-07-01 Hits:
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Xun Lou, Wenfeng Zhang,* Zijian Xie, Li Yang, Xu Yu, Yuan Liu, and Haixin Chang, Solution-processed high-k dielectrics for improving the performance of flexible intrinsic Ge nanowire transistors: Dielectrics screening, interface engineering and electrical properties, J. Phys. D: Appl. Phys., 52 (2019) 505103
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Zhang Wenfeng#, *, Lou Xun, Xie Zijian, Chang Haixin, Band bending analysis of charge characteristics at GeO2/Ge interface by x-ray photoemission spectroscopy, J. Phys. D: Appl. Phys., 2019.1.23, 52(4): 045101