(2) Wang, H.; Lu, Y.; Liu, S.; Yu, J.; Hu, M.; Li, S.; Yang, R.; Watanabe, K.; Taniguchi, T.; Ma, Y.; Miao, X.; Zhuge, F.; He, Y.; Zhai, T. Adaptive Neural Activation and Neuromorphic Processing via Drain‐Injection Threshold‐Switching Float Gate Transistor Memory. Adv. Mater. 2023, 35 (52), e2309099.
发布时间：2024-11-07
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