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- 教师英文名称： Zhuge Fuwei
- 性别： 男
- 在职信息： 在职
- 所在单位： 材料科学与工程学院
- 学历： 研究生(博士)毕业
- 学位： 工学博士学位
- (1) Yu, J.; Wang, H.; Zhuge, F.; Chen, Z.; Hu, M.; Xu, X.; He, Y.; Ma, Y.; Miao, X.; Zhai, T. Simultaneously Ultrafast and Robust Two-Dimensional Flash Memory Devices Based on Phase-Engineered Edge Contacts. Nat. Commun. 2023, 14 (1), 5662..
- (2) Wang, H.; Lu, Y.; Liu, S.; Yu, J.; Hu, M.; Li, S.; Yang, R.; Watanabe, K.; Taniguchi, T.; Ma, Y.; Miao, X.; Zhuge, F.; He, Y.; Zhai, T. Adaptive Neural Activation and Neuromorphic Processing via Drain‐Injection Threshold‐Switching Float Gate Transistor Memory. Adv. Mater. 2023, 35 (52), e2309099. .
- (3) Li, S.; Zhang, H.; Ruan, H.; Cheng, Z.; Yao, Y.; Zhuge, F.; Zhai, T. Programmable Nucleation and Growth of Ultrathin Tellurium Nanowires via a Pulsed Physical Vapor Deposition Design. Adv. Funct. Mater. 2023, 33 (11), 2211527. .
- (4) Zhou, X.; Zhuge, F.; Wang, H.; Zhai, T. Vapor‐Phase Precise‐Synthesis of 2D Inorganic Materials for Optoelectronics. Chin. J. Chem. 2023, 41 (7), 825–834. .
- (5) Hu, M.; Yu, J.; Chen, Y.; Wang, S.; Dong, B.; Wang, H.; He, Y.; Ma, Y.; Zhuge, F.; Zhai, T. A Non-Linear Two-Dimensional Float Gate Transistor as a Lateral Inhibitory Synapse for Retinal Early Visual Processing. Mater Horizons 2022, 9 (9), 2335–2344. .
- (6) Wu, J.; Zhuge, F.; Li, H.; Zhai, T. Recent Advances in Two-Dimensional p-Type Metal Chalcogenides: Synthesis, Doping Strategies and Applications. J Phys D Appl Phys 2022, 56 (2), 023001. .
- (7) Lv, L.; Yu, J.; Hu, M.; Yin, S.; Zhuge, F.; Ma, Y.; Zhai, T. Design and Tailoring of Two-Dimensional Schottky, PN and Tunnelling Junctions for Electronics and Optoelectronics. Nanoscale 2021, 13 (14), 6713–6751. .
- (8) Lv, L.; Zhuge, F.; Yin, S.; Yu, J.; Cao, G.; Zhai, T. Gain Characteristics of Bipolar Junction Phototransistors with Customized Base Width Using Ferroelectric Polarization Patterning. J Phys D Appl Phys 2021, 54 (48), 485104. .
- (9) Chen, Y.; Yu, J.; Zhuge, F.; He, Y.; Zhang, Q.; Yu, S.; Liu, K.; Li, L.; Ma, Y.; Zhai, T. An Asymmetric Hot Carrier Tunneling van Der Waals Heterostructure for Multibit Optoelectronic Memory. Mater Horizons 2020, 7 (5), 1331–1340. .
- (10) Zhang, Q.; Zhuge, F.; Xie, F.; Yu, J.; Yu, S.; Zhai, T. Ion Gel‐Gated Nonvolatile Formation of Lateral MoTe2 Diode for Self‐Powered Near‐Infrared Photodetection. Phys Status Solidi 2020, 217 (10), 2000032. .
