论文类型：期刊论文
第一作者：赵雨薇
通讯作者：缪向水
合写作者：鄢俊兵,孙华军,童浩,程伟明,程敏,程乐乐,苏睿
发表刊物：Ceramics International
所属单位：华中科技大学
学科门类：工学
一级学科：电子科学与技术
文献类型：J
卷号：49
期号：6
页面范围：9090-9096
关键字：BiFeO3 ；Mn掺杂；电阻切换；功耗；氧空位
DOI码：10.1016/j.ceramint.2022.11.066
发表时间：4476-03-01
摘要：Due to the instability of Fe valence and the existence of a large number of oxygen vacancies in BFO films, a large leakage current and comparatively low resistance value usually appear in BFO based devices and high operating voltage and power consumption are demanded to form regular oxygen vacancy conductive channels, which restricts the application of BFO in resistive memory and memristor devices. In this paper, a series of Pt/BiFe 1-x Mn x O 3 /TiN (BFMO, x=0, 0.05, 0.1, 0.15, 0.2) devices with different Mn doping concentrations were prepared by magnetron sputtering and lithography, and the microstructure and electrical characteristics of BFMO-based devices were investigated. As the amount of Mn doping increases, the resistive switching properties including operating voltage, power consumption, cycle stability, and retention of BFMO device first improve and then degrade. Interestingly, with the increase of Mn doping concentrations, the ratio of Fe 2+ to Fe 3+ and oxygen vacancies to lattice oxygen in BFMO devices analyzed by X-ray photoelectron spectroscopy initially diminishes reaching the minimum and then rises. Notably, BiFe 0.9 Mn 0.1 O 3 device presents low DC operating voltage of -0.7 V and 0.8 V, preferable endurance of 10 4 pulse cycles, and low power consumption of only 0.45 pJ in a single set process. The remarkable electrical performance in BFMO-based devices is likely originated from the inhibition of initial oxygen vacancies caused by Mn doping with appropriate content.
发布期刊链接：https://www.sciencedirect.com/science/article/pii/S0272884222040482?via%3Dihub