Indexed by: Journal paper

First Author: Yifan Yang,Zichong Zhang,Pinfeng Jiang

Correspondence Author: Xingsheng Wang

Co-author: Rui Su,Menghua Huang,Tonghui Lin,Xiangshui Miao

Journal: IEEE Electron Device Letters

Included Journals: SCI、EI

Affiliation of Author(s): 华中科技大学

Volume: 45

Issue: 1

Page Number: 36-39

ISSN No.: 0741-3106

Key Words: Hf0.5Zr0.5O2 (HZO), ferroelectric tunnel junction (FTJ), ON/OFF ratio, thermal rewake-up, neuromorphic computing

DOI number: 10.1109/LED.2023.3336396

Date of Publication: 2024-01-01

Abstract: The Hf0.5Zr0.5O2-based ferroelectric tunnel junction (FTJ) devices are fabricated and further enhanced by a proposed “thermal rewake-up” (TR) operation at different high temperatures. The measured electrical characteristics show that TR operation can significantly enhance the ferroelectric remnant polarization up to 29.1 μC/cm2, and can boost the FTJ resistance ON/OFF ratio from 9.8 to 34.9, meantime achieving 105 cycles endurance and >10^4 s data retention. Furthermore, the neural network adopting TR FTJ devices as electronic synapses exhibits improved accuracy from 95.76% to 98.81% and enhanced tolerance to noise in the task of handwritten digit recognition. Hence, this letter demonstrates a feasible approach to improve the switching behavior of FTJ devices in applications of binary/multi-level memories and neuromorphic computing.