Xingsheng Wang
246
2025-5-27，Tuesday
·Paper Publications
- [41] Asen Asenov,A. Asenov, B. Cheng, X. Wang, A. R. Brown, D. Reid, C. Millar,C. L. Alexander.Simulation Based Transistor-SRAM Co-Design in the Presence of Statistical Variability and Reliability.Proc. IEEE International Electron Devices Meeting (IEDM),2013,818-821
- [42] Xingsheng Wang,X. Wang, B. Cheng, A. R. Brown, C. Millar, J. B. Kuang, S. Nassif,A. Asenov.Xingsheng Wang.Interplay Between Process-Induced and Statistical Variability in 14-nm CMOS Technology Double-Gate SOI FinFETs.[J].IEEE Transactions on Electron Devices,2013,(8):2485–2492
- [43] Xingsheng Wang,Fikru Adamu-Lema,Binjie Cheng,Asen Asenov.Xingsheng Wang.Geometry, Temperature, and Body Bias Dependence of Statistical Variability in 20-nm Bulk CMOS Technology: A Comprehensive Simulation Analysis.IEEE Transactions on Electron Devices,2013,(5):1547–1554
- [44] Xingsheng Wang,X. Wang, G. Roy, O. Saxod, A. Bajolet, A. Juge,A. Asenov.Xingsheng Wang.Simulation Study of Dominant Statistical Variability Sources in 32-nm High-κ/Metal Gate CMOS.IEEE Electron Device Letters,2012,(5):IEEE Electron Device Letters
- [45] Xingsheng Wang, Andrew R. Brown, Binjie Cheng, Asen Asenov.Xingsheng Wang.Statistical Variability and Reliability in Nanoscale FinFETs.[C].Proc. International Electron Devices Meeting (IEDM),2011,103-106
- [46] Xingsheng Wang,X. Wang, B. Cheng, A. R. Brown, C. Millar, J. B. Kuang, S. Nassif,A. Asenov.Xingsheng Wang.Statistical Variability and Reliability and the Impact on Corresponding 6T-SRAM Cell Design for a 14-nm Node SOI FinFET Technology.[J].IEEE Design & Test,2011,(6):18-28
- [47] Xingsheng Wang,X. Wang, A.R. Brown, N. Idris, S. Markov, G. Roy,A. Asenov.Xingsheng Wang.Statistical Threshold-Voltage Variability in Scaled Decananometer Bulk HKMG MOSFETs: A Full-Scale 3-D Simulation Scaling Study.[J].IEEE Transactions on Electron Devices,2011,(8):2293–2301