Xingsheng Wang
·Paper Publications
- [31] Xiao-Di Huang, Yi Li , Hao-Yang Li, Kan-Hao Xue , Xingsheng Wang ,Xiang-Shui Miao.Yi Li.Forming-Free, Fast, Uniform, and High Endurance Resistive Switching From Cryogenic to High Temperatures in W/AlOx/Al2O3/Pt Bilayer Memristor.[J].IEEE Electron Device Letters,2020,(4):549-552
- [32] Qiang Huo, Zhenhua, Wu, Weixing Huang, Geyu Tang, Jiaxin Yao, Yongpan Liu, Xiaojin Zhao, Ling Li, Ming Liu.Zhenhua Wu, Xingsheng Wang, Feng Zhang.A Novel General Compact Model Approach for 7-nm Technology Node Circuit Optimization From Device Perspective and Beyond.[J].Journal of the Electron Device Society,2020,(1):295-301
- [33] Qiang Huo, Zhenhua Wu, Weixing Huang, Jiaxin Yao, Jianhui Bu, Ming Liu.Zhenhua Wu, Xingsheng Wang, Feng Zhang, Ling Li.Physics-Based Device-Circuit Cooptimization Scheme for 7-nm Technology Node SRAM Design and Beyond.[J].IEEE Transactions on Electron Devices,2020,(3):907-914
- [34] Huan Liu, Chengxu Wang, Genquan Han , Jing Li , Yue Peng , Yan Liu , Xingsheng Wang , Ni Zhong, Chungang Duan, Xinran Wang, Nuo Xu, Tsu-Jae King Liu, Yue Hao.Genquan Han.ZrO2 Ferroelectric FET for Non-volatile Memory Application.[J].IEEE Electron Device Letters,2019,(9):1419-1422
- [35] Meng Duan,M. Duan , C. Navarro , B. Cheng, F. Adamu-Lema , Xingsheng Wang , V. P. Georgiev , F. Gamiz , C. Millar,A. Asenov.Meng Duan.Thorough Understanding of Retention Time of Z2FET Memory Operation.[J].IEEE Transactions on Electron Devices,2019,(1):383-388
- [36] Xingsheng Wang, V. P. Georgiev, F. Adamu-Lema, L. Gerrer, S. M. Amoroso,A. Asenov.Xingsheng Wang.Chapter 6: TCAD-based design technology co-optimization for variability in nanoscale SOI FinFETs.Integrated Nanodevice and Nanosystem Fabrication: Materials, Techniques, and New Opportunities,2017,
- [37] Xingsheng Wang,X. Wang, B. Cheng, D. Reid, A. Pender, P. Asenov, C. Millar,A. Asenov.Xingsheng Wang.FinFET Centric Variability-Aware Compact Model Extraction and Generation Technology Supporting DTCO.[J].IEEE Transactions on Electron Devices,2015,(10):3139–3146
- [38] Asen Asenov,A. Asenov, B. Cheng, X. Wang, A. R. Brown, C. Millar, C. Alexander, S. M. Amoroso, J. B. Kuang,S. Nassif.Asen Asenov.Variability Aware Simulation Based Design-Technology Cooptimization (DTCO) Flow in 14 nm FinFET/SRAM Cooptimization.IEEE Transactions on Electron Devices,2015,(6):1682–1690
- [39] Fikru Adamu-Lema, Xingsheng Wang,F. Adamu-Lema, X. Wang, S. M. Amoroso, C. Riddet, B. Cheng, L. Shifren, R. Aitken, S. Sinha, G. Yeric,A. Asenov.Performance and variability of doped multi-threshold FinFETs for 10nm CMOS.IEEE Transactions on Electron Devices,2014,(10):3372-3378
- [40] Xingsheng Wang,X. Wang, A. R. Brown, B. Cheng, S. Roy,A. Asenov.Xingsheng Wang.Drain Bias Effects on Statistical Variability and Reliability and Related Subthreshold Variability in 20-nm Bulk Planar MOSFETs.Solid-State Electronics,2014,99–105