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论文类型：会议论文

第一作者：Xingsheng Wang

通讯作者：Xingsheng Wang

合写作者： Andrew R. Brown, Binjie Cheng, Asen Asenov

发表刊物：Proc. International Electron Devices Meeting (IEDM)

收录刊物：EI

学科门类：工学

一级学科：电子科学与技术

文献类型：C

页面范围：103-106

发表时间：2011-12-07

摘要：A comprehensive full-scale 3D simulation study of statistical variability and reliability in emerging, scaled FinFETs on SOI substrate with gate-lengths of 20nm, 14nm and 10nm and low channel doping is presented. Excellent electrostatic integrity and resulting tolerance to low channel doping are perceived as the main FinFET advantages, resulting in a dramatic reduction of statistical variability due to random discrete dopants (RDD). It is found that line edge roughness (LER), metal gate granularity (MGG) and interface trapped charges (ITC) dominate the parameter fluctuations with different dis

发布期刊链接：https://ieeexplore.ieee.org/document/6131494