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论文类型：期刊论文
第一作者：Xingsheng Wang
通讯作者：Xingsheng Wang
合写作者：Fikru Adamu-Lema,Binjie Cheng,Asen Asenov
发表刊物：IEEE Transactions on Electron Devices
收录刊物：SCI、EI
所属单位：University of Glasgow
卷号：60
期号：5
页面范围：1547–1554
关键字：Body bias , channel width , CMOS , gate length , temperature , variability
DOI码：10.1109/TED.2013.2254490
发表时间：2013-05-01
摘要：Conventional bulk CMOS, which is arguably most vulnerable to statistical variability (SV), is the workhorse of the electronic industry for more than three decades. In this paper, the dependence of the SV of key figures of merit on gate geometry, temperature, and body bias in 25-nm gate-length MOSFETs, representative for the 20-nm CMOS technology generation, is systematically investigated using 3-D statistical simulations. The impact of all relevant sources of SV is taken into account. The geometry dependence of the threshold-voltage dispersion (and indeed the dispersion of other key transistor figures of merit) does not necessarily follow the Pelgrom's law due to the complex nonuniform channel doping and the interplay of different SV sources. The DIBL variation, for example, follows a log-normal distribution. The temperature significantly affects the magnitudes of threshold voltage, subthreshold slope, ON/OFF currents, and the corresponding statistical distributions. Reverse body bias increases the threshold voltage and its fluctuation, while forward body bias reduces both of them.