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论文类型：期刊论文

第一作者：阳帆,王毅,王成旭

通讯作者：王兴晟

合写作者：马颖昊,缪向水

发表刊物：IEEE Electron Device Letters

收录刊物：SCI、EI

所属单位：华中科技大学

学科门类：工学

一级学科：电子科学与技术

文献类型：J

卷号：43

期号：9

页面范围：1459-1462

ISSN号：0741-3106

关键字：entropy source, memristor, reset process, TRNG circuit

DOI码：10.1109/LED.2022.3195347

发表时间：2022-08-01

影响因子：4.816

摘要：Aside from storing data, memristors can also be used as an entropy source, typically by utilizing the random characteristics of the high resistance state (HRS) or set/reset time delay (TD) of memristors. However, obtaining a reliable high-entropy source remains difficult. In this letter, we designed a novel random number generator (TRNG) circuit that takes full advantage of the memristor's randomness of reset switching, combining the HRS and TD entropies to achieve higher entropy. The entire random characteristic is derived from two temporal processes: the charging and discharging of a capacitor connected to the memristor. Experiments and simulations illustrate the function and advantages of the TRNG circuit, and a min-entropy of 0.9989 is attained, which is higher and more robust than two independent sources, and which can be further enhanced by the device design itself.

发布期刊链接：https://ieeexplore.ieee.org/document/9845418