·Paper Publications
Few-Layered MoS2 Field-Effect Transistors with a Vertical Channel of Sub-10 nm
Release time:2021-05-21  Hits:
Indexed by: Journal paper
Document Code: 3
First Author: X. Zou
Correspondence Author: W. Tang,J. Xu*
Co-author: H. Wang,L. Liu
Journal: ACS Appl. Mater. Inter
Included Journals: SCI
Affiliation of Author(s): 华中科技大学
Place of Publication: 英国
Discipline: Engineering
First-Level Discipline: Electronic Science And Technology
Funded by: 国家自然科学基金
Document Type: J
Volume: 12
Issue: 29
Page Number: 32943-32950
Date of Publication: 2020-07-10
Teaching and Research Group: 光学与电子信息学院