·Paper Publications
Improved Interfacial and Electrical Properties of MoS2 Transistor with High/Low-Temperature Grown Hf0.5Al0.5O as Top-Gate Dielectric
Release time:2021-05-21  Hits:
Indexed by: Journal paper
Document Code: 4
First Author: X. Zhao
Correspondence Author: L. Liu*,W. Tang
Co-author: J. P. Xu,P. Lai
Journal: IEEE Electron Device Lett.
Included Journals: SCI
Affiliation of Author(s): 华中科技大学
Place of Publication: 美国
Discipline: Engineering
First-Level Discipline: Electronic Science And Technology
Funded by: 国家自然科学基金
Document Type: J
Volume: 41
Issue: 3
Page Number: 385-388.
Date of Publication: 2020-03-05
Teaching and Research Group: 光学与电子信息学院