徐静平

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High-Quality CVD-MoS2 Synthesized on Surface-Modified Al2O3 for High-Performance MoS2 Field-Effect Transistors
Release time:2021-05-21  Hits:

Indexed by: Journal paper

Document Code: 9

First Author: X. Song

Correspondence Author: L. Liu

Co-author: J. P. Xu

Journal: IEEE Trans. on Electron Devices

Included Journals: SCI

Affiliation of Author(s): 华中科技大学

Place of Publication: 美国

Discipline: Engineering

First-Level Discipline: Electronic Science And Technology

Funded by: 国家自然科学基金

Document Type: J

Volume: 67

Issue: 11

Page Number: 5196-5200

Date of Publication: 2020-11-05

Teaching and Research Group: 光学与电子信息学院