·Paper Publications
High-Quality CVD-MoS2 Synthesized on Surface-Modified Al2O3 for High-Performance MoS2 Field-Effect Transistors
Release time:2021-05-21  Hits:
Indexed by: Journal paper
Document Code: 9
First Author: X. Song
Correspondence Author: L. Liu
Co-author: J. P. Xu
Journal: IEEE Trans. on Electron Devices
Included Journals: SCI
Affiliation of Author(s): 华中科技大学
Place of Publication: 美国
Discipline: Engineering
First-Level Discipline: Electronic Science And Technology
Funded by: 国家自然科学基金
Document Type: J
Volume: 67
Issue: 11
Page Number: 5196-5200
Date of Publication: 2020-11-05
Teaching and Research Group: 光学与电子信息学院