徐静平

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Improved electrical performance of multilayer MoS2 transistor by incorporating Al into host HfO2 as gate dielectric
Release time:2021-05-21  Hits:

Indexed by: Journal paper

Document Code: 14

First Author: Xinyuan Zhao

Correspondence Author: Jingping Xu*,Wing-Man Tang

Co-author: Lu Liu,Pui-To Lai

Journal: Applied Physics Express

Included Journals: SCI

Affiliation of Author(s): 华中科技大学

Place of Publication: 日本

Discipline: Engineering

First-Level Discipline: Electronic Science And Technology

Funded by: 国家自然科学基金

Document Type: J

Volume: 12

Issue: 6

Page Number: 64005

Date of Publication: 2019-06-05

Teaching and Research Group: 光学与电子信息学院