·Paper Publications
Improved electrical performance of multilayer MoS2 transistor by incorporating Al into host HfO2 as gate dielectric
Release time:2021-05-21  Hits:
Indexed by: Journal paper
Document Code: 14
First Author: Xinyuan Zhao
Correspondence Author: Jingping Xu*,Wing-Man Tang
Co-author: Lu Liu,Pui-To Lai
Journal: Applied Physics Express
Included Journals: SCI
Affiliation of Author(s): 华中科技大学
Place of Publication: 日本
Discipline: Engineering
First-Level Discipline: Electronic Science And Technology
Funded by: 国家自然科学基金
Document Type: J
Volume: 12
Issue: 6
Page Number: 64005
Date of Publication: 2019-06-05
Teaching and Research Group: 光学与电子信息学院