华中科技大学主页平台管理系统 TONG HAO--英文主页--Paper Publications

童浩

Recommended Ph.D.Supervisor Recommended MA Supervisor

·Paper Publications

Current position: 英文主页 > Scientific Research > Paper Publications

[11] yangzhe,缪向水,TONG HAO,徐明,He Qiang,龚传涛,蔡经纬,张大友.TONG HAO.Joule heating induced non-melting phase transition and multi-level conductance in MoTe 2 based phase change memory.[J].Applied Physics Letters,4487,(20):203508
[12] WANG LUN,缪向水,陈江西,朱荣江,温晋宇.TONG HAO.Failure mechanism investigation and endurance improvement in Te-rich Ge–Te based ovonic threshold switching selectors.[J].Applied Physics Letters,4487,(19):193501
[13] 赵雨薇,yanjunbing,Huajun SUN,TONG HAO,CHENG WEI MING,程敏,程乐乐,苏睿.缪向水.Ultra-Low Power Consumption and Favorable Reliability Mn-Doped Bifeo3 Resistance-Switching Devices Via Tunable Oxygen Vacancy.[J].Ceramics International,4476,(6):9090-9096
[14] 曾运韬,缪向水,TONG HAO,徐明,朱云来,李翰.程晓敏.Introducing Spontaneously Phase‐Separated Heterogeneous Interfaces Enables Low Power Consumption and High Reliability for Phase Change Memory.[J].Advanced Electronic Materials,4475,(10):2200437
[15] He Qiang,缪向水,banguoxun,卢轶韬,刘志远.yi,wang,TONG HAO.Low-loss ultrafast and non-volatile all-optical switch enabled by all-dielectric phase change materials.[J].iScience,4472,
[16] WANG LUN,chenziqi,缪向水,温晋宇.TONG HAO.Controllable Threshold Voltage ( V th ) Drift in Ovonic Threshold Switch Devices Under a High-Frequency Continuous Operation.[J].IEEE Transactions on Electron Devices,4471,2103478
[17] 赵锐哲,杨岭,缪向水,余颖洁.TONG HAO,李祎.In-Memory Search With Phase Change Device-Based Ternary Content Addressable Memory.[J].IEEE Electron Device Letters,4471,(7):1053-1056
[18] 赵锐哲,缪向水,程晓敏,chenziqi,WANG LUN,何明泽.TONG HAO.Improved multilevel storage capacity in Ge2Sb2Te5-based phase-change memory using a high-aspect-ratio lateral structure.[J].Science China Materials,4466,
[19] 李鑫,He Qiang,TONG HAO.He Qiang,TONG HAO.Resistance Drift-Reduced Multilevel Storage and Neural Network Computing in Chalcogenide Phase Change Memories by Bipolar Operation.[J].IEEE Electron Device Letters,4461,(4):565-568
[20] yangzhe,程晓敏,TONG HAO,徐萌,王旭东,libowen.Ma,En,张伟,缪向水,徐明.Designing Conductive‐Bridge Phase‐Change Memory to Enable Ultralow Programming Power (Adv. Sci. 8/2022).[J].Advanced Science,4457,

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