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论文类型：期刊论文

第一作者：张子冲

通讯作者：王兴晟

合写作者：王成旭,杨逸凡,缪向水

发表刊物：Applied Physics Letters

收录刊物：SCI、EI

文献类型：J

卷号：122

页面范围：152902

DOI码：10.1063/5.0137776

发表时间：2023-04-10

影响因子：3.971

摘要：This paper discusses a mechanism and method for polarization enhancement in fabricated Hf0.5Zr0.5O2 (HZO) capacitors. The proposed reawakening voltage operation method (RVOM) to HZO films at elevated temperatures increases the transient switching current and polarization. The change in conduction mechanisms for the HZO capacitor current after RVOM can be observed by fitting leakage current curves. The generation of oxygen vacancies (VO) by RVOM causes a rapid increase in the leakage current and a gradual degradation in the breakdown voltages of HZO capacitors. As a result, while an appropriate amount of VO generation improves the polarization, an excess will damage the reliability of HZO films. Furthermore, the augmentation of polarization does not disappear after the cooling process, which indicates that the VO as induced by RVOM does not attenuate as the temperature decreases. Our approach and the experimental results have generated ideas on how to improve the polarization of HZO films.

发布期刊链接：https://doi.org/10.1063/5.0137776