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论文类型：期刊论文

第一作者：杨逸凡,张子冲,江品锋

通讯作者：王兴晟

合写作者：苏睿,黄梦华,林桐晖,缪向水

发表刊物：IEEE Electron Device Letters

收录刊物：SCI、EI

所属单位：华中科技大学

卷号：45

期号：1

页面范围：36-39

ISSN号：0741-3106

关键字：Hf0.5Zr0.5O2 (HZO), ferroelectric tunnel junction (FTJ), ON/OFF ratio, thermal rewake-up, neuromorphic computing

DOI码：10.1109/LED.2023.3336396

发表时间：2024-01-01

摘要：The Hf0.5Zr0.5O2-based ferroelectric tunnel junction (FTJ) devices are fabricated and further enhanced by a proposed “thermal rewake-up” (TR) operation at different high temperatures. The measured electrical characteristics show that TR operation can significantly enhance the ferroelectric remnant polarization up to 29.1 μC/cm2, and can boost the FTJ resistance ON/OFF ratio from 9.8 to 34.9, meantime achieving 105 cycles endurance and >10^4 s data retention. Furthermore, the neural network adopting TR FTJ devices as electronic synapses exhibits improved accuracy from 95.76% to 98.81% and enhanced tolerance to noise in the task of handwritten digit recognition. Hence, this letter demonstrates a feasible approach to improve the switching behavior of FTJ devices in applications of binary/multi-level memories and neuromorphic computing.