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论文类型:论文集
第一作者:张子冲
通讯作者:王兴晟
合写作者:杨逸凡,苏睿,林桐晖,缪向水
发表刊物:8th IEEE Electron Devices Technology and Manufacturing (EDTM) Conference
收录刊物:EI
页面范围:1-3
DOI码:10.1109/EDTM58488.2024.10511655
发表时间:2024-03-06
摘要:Hf0.5Zr0.5O2 (HZO) capacitors are well prepared with excellent ferroelectricity, and recorded polarization switching (PSw)=30.5μC/cm2 is achieved by the proposed “thermal rewake-up” (TR) operations and a large single orthorhombic phase (O-phase) grain in 40-nm long region has been demonstrated correspondingly. Oxygen diffusion region can be observed in HZO capacitors with TR operation. Meanwhile, the TR operation of ferroelectric enhancement shows no degradation of endurance of HZO capacitors, indicating the possibility to be widely used.
发布期刊链接:https://ieeexplore.ieee.org/abstract/document/10511655