王兴晟

个人信息Personal Information

教授   博士生导师   硕士生导师  

性别:男

在职信息:在职

所在单位:集成电路学院

学历:研究生(博士)毕业

学位:哲学博士学位

毕业院校:格拉斯哥大学

学科:微电子学与固体电子学

论文成果

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Recorded Ferroelectric Polarization Switching of Hf0.5Zr0.5O2 Capacitors Achieved by Thermal Rewake-up

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论文类型:论文集

第一作者:张子冲

通讯作者:王兴晟

合写作者:杨逸凡,苏睿,林桐晖,缪向水

发表刊物:8th IEEE Electron Devices Technology and Manufacturing (EDTM) Conference

收录刊物:EI

页面范围:1-3

DOI码:10.1109/EDTM58488.2024.10511655

发表时间:2024-03-06

摘要:Hf0.5Zr0.5O2 (HZO) capacitors are well prepared with excellent ferroelectricity, and recorded polarization switching (PSw)=30.5μC/cm2 is achieved by the proposed “thermal rewake-up” (TR) operations and a large single orthorhombic phase (O-phase) grain in 40-nm long region has been demonstrated correspondingly. Oxygen diffusion region can be observed in HZO capacitors with TR operation. Meanwhile, the TR operation of ferroelectric enhancement shows no degradation of endurance of HZO capacitors, indicating the possibility to be widely used.

发布期刊链接:https://ieeexplore.ieee.org/abstract/document/10511655