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论文类型：期刊论文

第一作者：黄梦华,江品锋

通讯作者：王兴晟

合写作者：王成旭,汪美青,马颖昊,甘周超,杨逸凡,缪向水

发表刊物：IEEE Transactions on Electron Devices

收录刊物：SCI、EI

卷号：71

期号：8

页面范围：4613-4618

关键字：Analogy memristor, back-end-of-line (BEOL) integration, CMOS, one transistor one memristor (1T1M), synaptic device, temperature

DOI码：10.1109/TED.2024.3406310

发表时间：2024-06-12

摘要：The memristor is a promising candidate for multilevel memory and neuromorphic computing. This study successfully integrated HfO x /AlO y superlattice-like (SLL) memristors in the 0.18/0.5 μ m CMOS back-end-of-line (BEOL) process and statistically analyzed their performance. We identified that BEOL annealing (400 ∘ C/30 min) can cause oxygen diffusion and short-circuiting, but reducing Ti electrode thickness mitigates this issue. Furthermore, low post-forming resistance is discussed and solved by one transistor one memristor (1T1M) structure. Finally, we fabricate a 1T1M crossbar array with a size of 1 Kb in the 0.18 μ m CMOS process. We demonstrated the multilevel characteristics and endurance of 1T1M. Furthermore, the stable and precise multilevel conductance programming of memristors is achieved by a specific writing method and we simulated the effect of conductance of failure bits on classification accuracy in a four-layer MLP network on the MNIST dataset.

发布期刊链接：https://ieeexplore.ieee.org/document/10555550