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论文类型：论文集

第一作者：阳帆

通讯作者：王兴晟

合写作者：李楠,黄俊澄,王庆洁,缪向水

发表刊物：IEEE International Conference on Integrated Circuits, Technologies and Applications (ICTA)

收录刊物：EI

关键字：memristors, compute-in-memory, self-write termination, design technology co-optimization

发表时间：2024-10-23

摘要：The variations of memristors can cause a degradation of computational precision in the compute-in-memory (CIM), consistently impeding the deployment of CIM applications. The random growth of conductive filaments is an intrinsic property, so that the variation is difficult to overcome through fabrications. Nonetheless, this study offers a viable approach to mitigating variation through the design of circuit and technology cooptimization (DTCO). By integrating the HfOx/AlOy superlatticelike device fabrication with a feedback circuit, this work has achieved the precise self-write termination of the memristor resistance. The results of test demonstrate that the superlatticelike memristors exhibit favorable gradual resistance change, which makes the feedback circuitry adjust the resistance in time. In comparison to the write-verification, this self-write termination has minimized variations and boosted endurance effectively.