|
论文成果
当前位置： Chinese homepage >> 科学研究 >> 论文成果Forming-Free, Fast, Uniform, and High Endurance Resistive Switching From Cryogenic to High Temperatures in W/AlOx/Al2O3/Pt Bilayer Memristor
点击次数：
论文类型：期刊论文
第一作者：Xiao-Di Huang
通讯作者：Yi Li
合写作者： Yi Li , Hao-Yang Li, Kan-Hao Xue , Xingsheng Wang ,Xiang-Shui Miao
发表刊物：IEEE Electron Device Letters
收录刊物：SCI、EI
刊物所在地：USA
学科门类：工学
一级学科：电子科学与技术
文献类型：J
卷号：41
期号：4
页面范围：549-552
关键字：Memristor, resistive switching, bilayer structure, forming-free, thermal stability
发表时间：2020-04-01
摘要：Throughoxygenprofileengineering,we fabricated W/AlOx/Al2 O3 /Pt bilayer memristors with a 250-nm feature size. The AlOx fabricated by sputtering serves as an oxygen vacancy source, whereas the Al2 O3 deposited by atomic layer deposition acts as a dominant resistive switching (RS) layer. Our devices show forming-free RS behaviors with high speed (28 ns), uniform resistance distribution, large on/off ratio (∼103 @100K, ∼103 @298K, and∼80@400K), and good retention. Besides, temperature stability with record high endurance from cryogenic to high-temperature(108 @100K,1010 @298K,and107 @400K) is dem