点击次数：

论文类型：期刊论文

第一作者：Yujie Song,Qiwen Wu

通讯作者：Xingsheng Wang

合写作者：Chengxu Wang,Xiangshui Miao

发表刊物：IEEE Electron Device Letters

收录刊物：SCI、EI

所属单位：华中科技大学

刊物所在地：USA

学科门类：工学

一级学科：电子科学与技术

项目来源：重点研发项目2019YFB2205100, 国家自然科学基金应急项目61841404

文献类型：J

卷号：42

期号：9

页面范围：1398-1401

关键字：memristor, XOR, encryption, Kirchhoff's law, variation.

DOI码：10.1109/LED.2021.3102678

发表时间：2021-08-30

影响因子：4.187

摘要：In this study, an optimized XOR logic gate is briefly proposed based on memristors. The proposed XOR exhibits a simple structure that comprises two memristors; it requires merely two steps to complete logic. The inputs of the gate are applied by voltage and memristive resistance, and the output is stored as the resistance value of the output cell. Furthermore, the encryption and decryption based on such a circuit have been verified by performing a parallel electrical test successfully. At the same time, the parallel scheme and the cascaded serial scheme are compared in detail. Moreover, the mentioned energy-efficient circuit helps achieve more complex logic functions. Abiding by Kirchhoff's law, the effect of the memory window and the variation of devices’ parameter on the calculation accuracy has been further analyzed in depth, which helps develop a complete binary logic calculation theory. On that basis, a digital in-memory calculation system can be more effectively built based on memristors.

发布期刊链接：https://doi.org/10.1109/LED.2021.3102678.