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当前位置： Chinese homepage >> 科学研究 >> 论文成果High switching uniformity in HfOx-based memristors by adding polydopamine-derived Ag nanoparticles on the electrode
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论文类型：期刊论文
第一作者：宋玉洁
通讯作者：王兴晟
合写作者：吴绮雯,王成旭,杜硕,张连斌,缪向水
发表刊物：Applied Physics Letters
收录刊物：SCI、EI
学科门类：工学
一级学科：电子科学与技术
文献类型：J
卷号：118
期号：22
页面范围：223501
关键字：memristor, uniformity, variation, PDA, AgNPs, temperature, simulation
DOI码：10.1063/5.0049702
发表时间：2021-05-31
影响因子：3.597
摘要：In this Letter, a Ti/HfOx/Pt memristor with a modified Ti electrode created by inserting polydopamine (PDA)/Ag nanoparticles (AgNPs) between the Ti electrode and functional layer is reported. This memristor exhibits a significant improvement in the uniformity of device parameters [including set voltage, reset voltage, high resistance state (HRS) resistances, low resistance state (LRS) resistances, endurance, and retention] compared to conventional memristors. The AgNPs embedded in PDA renders a reduced variability in HRS and LRS resistances from 47% to 7%, and 46% to 11%, respectively. By fitting Poole–Frenkel and Ohmic behavior models, the consistency of the conductive mechanism of the devices before and after modification has been proven, which is further enhanced through variable temperature tests and the simulation of electric field distribution. It is believed that AgNPs play a lightning rod role in guiding the growth of conductive paths; thus, by growing AgNPs in situ on PDA film on the Ti electrode, it reduces the parameter variability.