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论文类型：期刊论文

第一作者：罗浩文

通讯作者：王兴晟

合写作者：李睿涵,缪向水

发表刊物：SCIENCE CHINA Information Sciences

收录刊物：SCI、EI

所属单位：华中科技大学

刊物所在地：中国

学科门类：工学

一级学科：电子科学与技术

文献类型：J

卷号：66

期号：2

页面范围：129402

ISSN号：1674-733X

关键字：nanosheet transistor, TCAD simulation, interplay, quantum confinement variation, statistical variability

DOI码：10.1007/s11432-021-3399-3

发表时间：2023-02-01

影响因子：7.275

摘要：In this paper, subject to the strong quantum confinement effect, the variability of 3D sub-5nm nanosheet transistors (NSTs) is comprehensively studied by a TCAD simulation platform, which is strictly calibrated against the experimental data and 2D Poisson-Schrodinger (PS) quantum simulations. Firstly, following the process-induced global variation, the NST channel geometry dependence of the key figures of merit including subthreshold slope, drain-induced barrier lowering, on-state current, off-state current and on-state current to off-state current ratio is presented and analyzed. It is found that the device performance of the nominal transistor can be further improved. Finally, the statistical variability (SV) due to random discrete dopants (RDD), metal gate granularity (MGG), and nanosheet edge roughness (SER) considering the interplay with quantum confinement variation effect, is explored. RDD mainly generated in extension region results in the considerable threshold voltage and large on-state current variations. MGG is still the dominant statistical variability source in NSTs but strong quantum confinement contributes slightly. SER can also cause the large threshold voltage fluctuation for thin NSTs boosted by the quantum confinement variation