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当前位置： Chinese homepage >> 科学研究 >> 论文成果Statistical Threshold-Voltage Variability in Scaled Decananometer Bulk HKMG MOSFETs: A Full-Scale 3-D Simulation Scaling Study
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论文类型：期刊论文
第一作者：Xingsheng Wang
通讯作者：Xingsheng Wang
合写作者：X. Wang, A.R. Brown, N. Idris, S. Markov, G. Roy,A. Asenov
发表刊物：IEEE Transactions on Electron Devices
收录刊物：EI、SCI
学科门类：工学
一级学科：电子科学与技术
文献类型：J
卷号：58
期号：8
页面范围：2293–2301
发表时间：2011-08-01
摘要：This paper presents a comprehensive full-scale three-dimensional simulation scaling study of the statistical threshold-voltage variability in bulk high- k /metal gate (HKMG) MOSFETs with gate lengths of 35, 25, 18, and 13 nm. Metal gate granularity (MGG) and corresponding workfunction-induced threshold-voltage variability have become important sources of statistical variability in bulk HKMG MOSFETs. It is found that the number of metal grains covering the gate plays an important role in determining the shape of the threshold-voltage distribution and the magnitude of the threshold-voltage varia