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当前位置： Chinese homepage >> 科学研究 >> 论文成果Statistical Variability and Reliability and the Impact on Corresponding 6T-SRAM Cell Design for a 14-nm Node SOI FinFET Technology
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论文类型：期刊论文
第一作者：Xingsheng Wang
通讯作者：Xingsheng Wang
合写作者：X. Wang, B. Cheng, A. R. Brown, C. Millar, J. B. Kuang, S. Nassif,A. Asenov
发表刊物：IEEE Design & Test
收录刊物：SCI、EI
所属单位：University of Glasgow
文献类型：J
卷号：30
期号：6
页面范围：18-28
关键字：co-design , finFET , half select disturb , reliability , SRAM , stability , static noise margin , variability
发表时间：2011-11-01
摘要：This paper presents an evaluation of 14-nm SOI FinFET CMOS SRAM codesign techniques in the presence of statistical variability and reliability impact. As statistical variability sources random discrete dopants, gate-edge roughness, fi-edge roughness, metal-gate granularity and random interface trapped charges in N/PBTI are considered.
发布期刊链接：https://ieeexplore.ieee.org/document/6525375/?arnumber=6525375