个人信息
Personal information
教授 博士生导师 硕士生导师
性别：男
在职信息：在职
所在单位：集成电路学院
学历：研究生(博士)毕业
学位：工学博士学位
毕业院校：华中科技大学(Huazhong University of Sci. and Tech.)
学科：微电子学与固体电子学曾获荣誉：
2019 湖北省自然科学奖三等奖
2014 Nature Index: 2014 China: 对学校自然指数的突出贡献
- [1] Xin-Yuan Zhao,Lu Liu.Jing-Ping Xu*.Influence of Si-Substrate Concentration on Electrical Properties of Back- and Top-Gate MoS2 Transistors.[J].IEEE TRANSACTIONS ON ELECTRON DEVICES,2021,(6):3087-3090
- [2] Xinge Tao,Jingping Xu#.Lu Liu*,Pui-To Lai*.Improved subthreshold swing of MoS2 negative-capacitance transistor by fluorine-plasma treatment on ferroelectric Hf0.5Zr0.5O2 gate dielectric.[J].Nanotechnology,2021,135206 (8pp).
- [3] X. Zou,H. Wang,L. Liu.W. Tang,J. Xu*.Few-Layered MoS2 Field-Effect Transistors with a Vertical Channel of Sub-10 nm.[J].ACS Appl. Mater. Inter,2020,(29):32943-32950
- [4] X. Zhao,J. P. Xu,P. Lai.L. Liu*,W. Tang.Improved Interfacial and Electrical Properties of MoS2 Transistor with High/Low-Temperature Grown Hf0.5Al0.5O as Top-Gate Dielectric.[J].IEEE Electron Device Lett.,2020,(3):385-388.
- [5] X. Zhao,J. P. Xu#,Z. Li.L. Liu.Improved Electrical Properties of Top-Gate MoS2 Transistor with NH3-Plasma Treated HfO2 as Gate Dielectric.[J].IEEE Electron Device Lett.,2020,(9):1364-1367
- [6] Xingjuan Song,Lu Liu,Pui-To Lai.Jingping Xu*,Wing-Man Tang.Optimizing Al-doped ZrO2 as gate dielectric of MoS2 field-effect transistors.[J].Nanotechnology,2020,135206 (8pp).
- [7] X. Zou,L. Liu,H. Wang.J. Xu*,W.M. Tang.Long-term stability of multilayer MoS2 transistors with mica gate dielectric.[J].Nanotechnology,2020,(18):185202
- [8] X. Song,,J. P. Xu.L. Liu,P. Lai.Comprehensive investigation on CF4/O2-plasma treating the interfaces of stacked gate dielectric in MoS2 transistors.[J].Appl. Surf. Sci.,2020,148437
- [9] X. Song,J. P. Xu.L. Liu.High-Quality CVD-MoS2 Synthesized on Surface-Modified Al2O3 for High-Performance MoS2 Field-Effect Transistors.[J].IEEE Trans. on Electron Devices,2020,(11):5196-5200
- [10] Zhou L,Liu L.Xu J P*,Li C X.Comparative investigation on NH3-plasma treating different surfaces of stack-gate dielectric Ge MOS capacitors.[J].Applied Physics Express,2020,024001