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论文类型：期刊论文
第一作者：Huan Liu
通讯作者：Genquan Han
合写作者： Chengxu Wang, Genquan Han , Jing Li , Yue Peng , Yan Liu , Xingsheng Wang , Ni Zhong, Chungang Duan, Xinran Wang, Nuo Xu, Tsu-Jae King Liu, Yue Hao
发表刊物：IEEE Electron Device Letters
收录刊物：EI、SCI
刊物所在地：USA
学科门类：工学
一级学科：电子科学与技术
文献类型：J
卷号：40
期号：9
页面范围：1419-1422
关键字：Anti-ferroelectric, ferroelectric, ferroelectric field-effect transistor (FeFET), ZrO
发表时间：2019-09-01
摘要：We demonstrate for the first time ZrO2 ferroelectric field-effect transistors (FeFETs) for embedded non-volatilememoryapplications.Multiplesweepsofpolarization versus voltage measurement demonstrate that a metal/ZrO2/Ge capacitor is entirely free of wake-up effect and hassignificantlyimprovedfatiguecharacteristicscompared to a HfZrOx controldevice.Thanks to relativelysmall remnant polarization and a high-quality ZrO2 /Ge interface, up to 107 cycles program/erase endurance, 10 ns program/erase speed, and >10-year data retention at 85 °C are achieved.