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论文类型：期刊论文

第一作者：Meng Duan

通讯作者：Meng Duan

合写作者：M. Duan , C. Navarro , B. Cheng, F. Adamu-Lema , Xingsheng Wang , V. P. Georgiev , F. Gamiz , C. Millar,A. Asenov

发表刊物：IEEE Transactions on Electron Devices

收录刊物：EI、SCI

刊物所在地：USA

学科门类：工学

一级学科：电子科学与技术

文献类型：J

卷号：66

期号：1

页面范围：383-388

关键字：Dynamicrandomaccessmemory(DRAM), generation, injection, recombination, retention time, Shockley–Read

发表时间：2019-01-01

摘要：—A recently reported zero impact ionization and zero subthreshold swing device Z2FET is a promising candidate for capacitor-less dynamic random access memory (DRAM) memory cell. In the memory operation, dataretentiontimedeterminesrefreshfrequencyandisone ofthemostimportantmemorymerits.Inthispaper,wehave systematicallyinvestigatedthe Z2FET retention time based on a newly proposed characterization methodology. It is found that the degradation of HOLD “0” retention time originates from the gated-silicon on insulator (SOI) portion rather than the intrinsic-SOI region of the Z2FET. Electrons accumu