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论文类型：期刊论文

第一作者：Chengxu Wang

通讯作者：Xingsheng Wang

合写作者： Jibo Wu, Hao Yu, Genquan Han, Xiangshui Miao, Xingsheng Wang

发表刊物：IEEE Electron Device Letters

收录刊物：EI、SCI

所属单位：Huazhong University of Science and Technology

刊物所在地：USA

学科门类：工学

一级学科：电子科学与技术

文献类型：J

卷号：41

期号：11

页面范围：1625-1628

关键字：Negative capacitance (NC), Hf0.5Zr0.5O2, transistor, temperature, subthreshold slope, ON currents

发表时间：2020-10-25

摘要：There arises the growing interest of negative capacitance field effect transistors (NCFETs) for low-power applications, however, temperature as an inevitable influencing factor, its effects on NCFETs require more research for practical applications. In this work, we fabricated Hf0.5Zr0.5O2 (HZO) based NC p-channel FETs and developed a corresponding TCAD simulation deck to study the temperature impact. DC characteristics of NCFETs and its baseline MOSFETs at the common operation temperature range (-50 to 85℃) are measured and simulated. With the increase of temperature, NCFET subthreshold slope

发布期刊链接：https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=9187665