韩恺桢
个人信息
Personal information
其他
性别：男
在职信息：在职
所在单位：集成电路学院
学历：研究生(博士)毕业
学位：哲学博士学位
毕业院校：新加坡国立大学
学科：电子科学技术- [1] Han Kaizhen et. al.,High Performance Indium–Tin–Oxide Schottky Diodes for Terahertz Band Operation.Nano Letters,2024,(26):7919-7926
- [2] Han Kaizhen et. al.,A Specific Contact Resistivity Extraction Scheme With Strong Variation Immunity Customized for Thin-Film Semiconductors: Bridge Transmission Line Method.IEEE Transactions on Electron Devices,2024,(4):2766 - 2773
- [3] Han Kaizhen et. al.,A Novel Universal Model for Extracting Specific Contact Resistivity Featuring High Resolution, Strong Variation Immunity, and Simple Fabrication Process.IEEE International Electron Devices Meeting,2023,30.3.1 - 30.3.4
- [4] Han Kaizhen et. al.,Indium-Tin-Oxide Thin-Film Transistors with High Field-Effect Mobility (129.5 cm2/V⋅s) and Low Thermal Budget (150 °C).IEEE Electron Device Letters,2023,(12):1999 - 2002
- [5] Han Kaizhen et. al.,A Novel Bridge Transmission Line Method for Thin-Film Semiconductors: Modelling, Simulation Verification, and Experimental Demonstration.IEEE Symposium on VLSI Technology,2023,T2.1.1 - T2.1.2
- [6] Han Kaizhen et. al.,ITO Schottky Diode with Record fT Beyond 400 GHz: Exploring Thickness Dependent Film Property and Novel Heterogeneous Design.IEEE International Electron Devices Meeting,2022,22.7.1 - 22.7.4
- [7] Han Kaizhen et. al.,Indium-Gallium-Zinc-Oxide (IGZO) Nanowire Transistors.IEEE Transactions on Electron Devices,2021,(12):6610 - 6616
- [8] Han Kaizhen et. al.,First Demonstration of Oxide Semiconductor Nanowire Transistors: a Novel Digital Etch Technique, IGZO Channel, Nanowire Width Down to ~20 nm, and Ion Exceeding 1300 µA/µm.IEEE Symposium on VLSI Technology,2021,T10.1.1 - T10.1.2
- [9] Han Kaizhen et. al.,Hybrid Design Using Metal–Oxide–Semiconductor Field-Effect Transistors and Negative-Capacitance Field-Effect Transistors for Analog Circuit Applications.IEEE Transactions on Electron Devices,2020,(2):846 - 852
- [10] Han Kaizhen et. al.,High Field Temperature-Independent Field-Effect Mobility of Amorphous Indium–Gallium–Zinc Oxide Thin-Film Transistors: Understanding the Importance of Equivalent-Oxide-Thickness Downscaling.IEEE Transactions on Electron Devices,2020,(1):118 - 124